![]() |
Electronic Components Datasheet Search |
|
OX510 Datasheet(PDF) 1 Page - Advanced Crystal Technology |
|
OX510 Datasheet(HTML) 1 Page - Advanced Crystal Technology |
1 / 3 page ![]() OX510 Series Output characteristics Parameter Specification Remarks/Test condition Frequency range 5.0MHz ~ 40.0MHz HCMOS output Standard: 10MHz, 12.8MHz, 20MHz, 40MHz Frequency range 5.0MHz ~ 150.0MHz Sinewave output Standard: 10MHz, 100MHz, 125MHz Supply voltage (Vs) 3.3V typical (HCMOS) Min: 3.15V, Max: 3.45V 5.0V typical (HCMOS, Sinewave) Min: 4.75V, Max: 5.25V 12.0V typical (Sinewave) Min: 11.4V, Max: 12.6V Reference voltage VREF output 3.0V For Vs = 3.3V 4.0V For Vs = 5.0V 5.0V For Vs = 12.0V, For f≤40MHz 10.0V For Vs = 12.0V, For f˃40MHz Warm‐up current consumption 900.0mA max Vs = 3.3V 600.0mA max Vs = 5.0V 350.0mA max Vs = 12.0V Steady state current consumption @25°C 350.0mA max Vs = 3.3V 250.0mA max Vs = 5.0V 150.0mA max Vs = 12.0V RF output Output waveform Sine wave HCMOS Output load 50.0Ω 15.0pF ±10% Output level Min: +7.0dBm ‐ Harmonics ‐30.0dBc max ‐ Spurious ‐90.0dBc max ‐ Duty cycle ‐ 40%/60%' @ Vs/2 Rise/Fall time ‐ 5.0ns @ 10% ~ 90% Vs Warm‐up time at +25°C 3.0 minute typical, 5.0 minute max ∆f final/ fnominal < ±0.1ppm Phase noise Contact factory Frequency stability (Typical, @ 10.00MHz) Initial tolerance ±300.0ppb max At +25°C, Vc @ centre value vs Operating temperature range ±5.0ppb ~ ±200.0ppb Table 1 vs Supply voltage variation ±10.0ppb max Vs ± 5% vs Load change ±5.0ppb max RL ± 10% Long term aging/day AT‐cut: ±10.0ppb max ||SC‐cut: ±2.0ppb max After 30 days operation Long term aging 1 year AT‐cut: 300.0ppb typical, ±500.0ppb max SC‐cut: 50.0ppb typical, ±200.0ppb max After 30 days operation Frequency adjustment range Electronic frequency control (EFC) AT‐cut: ±2.0ppm min, ±5.0ppm max SC‐cut: ±0.8ppm min EFC voltage Vc Vref/2 ± Vref/2 EFC slope Positive EFC input impedance 100.0kΩ min Absolute maximum ratings Supply voltage Vs Min: ‐ 0.5V Max: Vs + 10% Vs to GND Control voltage Vc Min: ‐0.5V 15V Vc to GND Storage temperature ‐55°C ~ +125°C OCXO, Sine wave, HCMOS, 25.8 x 25.8 x 12.7mm ● Through hole package, high stability OCXO ● Unit weight: 20gm max ● RoHS compliant ACT (A wholly owned Acal BFi Company) +44 (0) 118 978 8878|sales@act.co.uk|www.act.co.uk ISO9001 Registered Specifications subject to change without notification |
|