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SI7911DN Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SI7911DN
Description  Dual P-Channel 20-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7911DN Datasheet(HTML) 4 Page - Vishay Siliconix

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Si7911DN
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72340
S-31612—Rev. A, 11-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10-3
10-2
1
10
600
10-1
10-4
100
0
20
30
10
15
Single Pulse Power
Time (sec)
25
- 0.2
- 0.1
0.0
0.1
0.2
0.3
0.4
- 50
- 25
0
25
50
75
100
125
150
ID = 250 mA
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 75_C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
100
600
0.1
0.001
1
10
Safe Operating Area, Junction-To-Ambient
VDS - Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
TA = 25_C
Single Pulse
0.1
ID(on)
Limited
rDS(on) Limited
0.01
5
IDM Limited
BVDSS Limited
P(t) = 10
P(t) = 1
P(t) = 0.1
dc
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001


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