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SI7911DN Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI7911DN Datasheet(HTML) 3 Page - Vishay Siliconix |
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Si7911DN Vishay Siliconix New Product Document Number: 72340 S-31612—Rev. A, 11-Aug-03 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 300 600 900 1200 1500 04 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 0 1 2 3 4 5 0 246 8 10 12 0.00 0.04 0.08 0.12 0.16 0.20 04 8 12 16 20 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 10 V ID = 5.7 A ID - Drain Current (A) VGS = 4.5 V ID = 5.7 A VGS = 4.5 V VGS = 1.8 V Gate Charge On-Resistance vs. Drain Current Qg - Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ - Junction Temperature (_C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.04 0.08 0.12 0.16 0.20 0 1234 5 TJ = 150_C TJ = 25_C ID = 1.1 A 20 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) VGS = 2.5 V 10 ID = 5.7 A |
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