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SI7911DN Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7911DN Datasheet(HTML) 2 Page - Vishay Siliconix |
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Si7911DN Vishay Siliconix New Product www.vishay.com 2 Document Number: 72340 S-31612—Rev. A, 11-Aug-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA - 0.40 - 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = - 16 V, VGS = 0 V -1 mA Zero Gate Voltage Drain Current IDSS VDS = - 16 V, VGS = 0 V, TJ = 85_C -5 mA On-State Drain Currenta ID(on) VDS v -5 V, VGS = - 4.5 V -20 A VGS = - 4.5 V, ID = - 5.7 A 0.040 0.051 Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 5.0 A 0.054 0.067 W DS(on) VGS = - 1.8 V, ID = - 1.1 A 0.075 0.094 Forward Transconductancea gfs VDS = - 6 V, ID = - 5.7 A 14 S Diode Forward Voltagea VSD IS = - 2.3 A, VGS = 0 V - 0.8 - 1.2 V Dynamicb Total Gate Charge Qg 9.5 15 Gate-Source Charge Qgs VDS = - 6 V, VGS = - 4.5 V, ID = - 5.7 A 1.6 nC Gate-Drain Charge Qgd 2.5 Gate Resistance Rg 7.2 W Turn-On Delay Time td(on) 20 30 Rise Time tr VDD = - 10 V, RL = 10 W 35 55 Turn-Off Delay Time td(off) VDD = - 10 V, RL = 10 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W 70 105 ns Fall Time tf 40 60 Source-Drain Reverse Recovery Time trr IF = - 2.1 A, di/dt = 100 A/ms 25 50 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 4 8 12 16 20 0 1234 5 VGS = 5 thru 2.5 V TC = - 55_C 125 _C 2 V 25 _C Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 1.5 V 1 V |
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