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SI7911DN Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI7911DN
Description  Dual P-Channel 20-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7911DN Datasheet(HTML) 2 Page - Vishay Siliconix

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Si7911DN
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72340
S-31612—Rev. A, 11-Aug-03
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 mA
- 0.40
- 1.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "8 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 16 V, VGS = 0 V
-1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = - 16 V, VGS = 0 V, TJ = 85_C
-5
mA
On-State Drain Currenta
ID(on)
VDS v -5 V, VGS = - 4.5 V
-20
A
VGS = - 4.5 V, ID = - 5.7 A
0.040
0.051
Drain-Source On-State Resistancea
rDS(on)
VGS = - 2.5 V, ID = - 5.0 A
0.054
0.067
W
DS(on)
VGS = - 1.8 V, ID = - 1.1 A
0.075
0.094
Forward Transconductancea
gfs
VDS = - 6 V, ID = - 5.7 A
14
S
Diode Forward Voltagea
VSD
IS = - 2.3 A, VGS = 0 V
- 0.8
- 1.2
V
Dynamicb
Total Gate Charge
Qg
9.5
15
Gate-Source Charge
Qgs
VDS = - 6 V, VGS = - 4.5 V, ID = - 5.7 A
1.6
nC
Gate-Drain Charge
Qgd
2.5
Gate Resistance
Rg
7.2
W
Turn-On Delay Time
td(on)
20
30
Rise Time
tr
VDD = - 10 V, RL = 10 W
35
55
Turn-Off Delay Time
td(off)
VDD = - 10 V, RL = 10 W
ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W
70
105
ns
Fall Time
tf
40
60
Source-Drain Reverse Recovery Time
trr
IF = - 2.1 A, di/dt = 100 A/ms
25
50
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
20
0
1234
5
VGS = 5 thru 2.5 V
TC = - 55_C
125
_C
2 V
25
_C
Output Characteristics
Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
1.5 V
1 V


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