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SI7911DN Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI7911DN Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page  FEATURES D TrenchFETr Power MOSFETS: 1.8-V Rated D New Low Thermal Resistance PowerPAKr Package APPLICATIONS D Portable - PA Switch - Battery Switch - Load Switch Si7911DN Vishay Siliconix New Product Document Number: 72340 S-31612—Rev. A, 11-Aug-03 www.vishay.com 1 Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.051 @ VGS = - 4.5 V - 5.7 -20 0.067 @ VGS = - 2.5 V - 5.0 0.094 @ VGS = - 1.8 V - 4.2 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D1 D1 D2 D2 3.30 mm 3.30 mm Bottom View PowerPAK 1212-8 S1 G1 D1 P-Channel MOSFET S2 G2 D2 P-Channel MOSFET Ordering Information: Si7911DN-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS "8 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID - 5.7 - 4.2 Continuous Drain Current (TJ = 150_C)a TA = 85_C ID - 4.1 - 3.0 A Pulsed Drain Current IDM -20 A continuous Source Current (Diode Conduction)a IS - 2.1 - 1.1 Maximum Power Dissipationa TA = 25_C PD 2.5 1.3 W Maximum Power Dissipationa TA = 85_C PD 1.3 0.85 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 10 sec R 40 50 Maximum Junction-to-Ambienta Steady State RthJA 75 94 _C/W Maximum Junction-to-Case Steady State RthJC 5.6 7 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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