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DMN1017UCP3-7 Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMN1017UCP3-7
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN1017UCP3-7 Datasheet(HTML) 3 Page - Diodes Incorporated

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DMN1017UCP3
Document number: DS39521 Rev. 4 - 2
3 of 7
www.diodes.com
April 2017
© Diodes Incorporated
DMN1017UCP3
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0
0.5
1
1.5
2
2.5
3
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS = 1.2V
V
GS = 1.4V
V
GS = 1.5V
V
GS = 2.0V
V
GS = 2.5V
V
GS = 3.0V
V
GS = 4.5V
V
GS = 8.0V
0
2
4
6
8
10
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS = 5V
T
J = -55
oC
T
J = 25
oC
T
J = 85
oC
T
J = 125
oC
T
J = 150
oC
0.012
0.014
0.016
0.018
0.02
0.022
0.024
0
5
10
15
20
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
V
GS = 1.8V
V
GS = 2.5V
V
GS = 3.3V
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0
1
2
3
4
5
6
7
8
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D = 5A
0.01
0.012
0.014
0.016
0.018
0.02
0.022
0
2
4
6
8
10
12
14
16
18
20
I
D, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
V
GS = 3.3V
T
J = -55
oC
T
J = 25
oC
T
J = 85
oC
T
J = 125
oC
T
J = 150
oC
0.01
0.012
0.014
0.016
0.018
0.02
0.022
0
2
4
6
8
10
12
14
16
18
20
I
D, DRAIN CURRENT (A)
Figure 6. Typical On-Resistance vs. Drain Current
and Junction Temperature
V
GS = 3.0V
T
J = -55
oC
T
J = 25
oC
T
J = 85
oC
T
J = 125
oC
T
J = 150
oC


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