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DMN1008UFDF Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMN1008UFDF
Description  12V N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN1008UFDF Datasheet(HTML) 3 Page - Diodes Incorporated

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DMN1008UFDF
Datasheet number: DS38322 Rev. 2 - 2
3 of 7
www.diodes.com
October 2017
© Diodes Incorporated
DMN1008UFDF
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0
0.5
1
1.5
2
2.5
3
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS = 1.0V
V
GS = 1.2V
V
GS = 1.5V
V
GS = 4.5V
V
GS = 3.0V
V
GS = 2.0V
V
GS = 2.5V
0.006
0.0065
0.007
0.0075
0.008
0.0085
0.009
0.0095
0.01
0
5
10
15
20
25
30
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
V
GS = 3.0V
V
GS = 2.5V
V
GS = 4.5V
0
0.02
0.04
0.06
0.08
0.1
0
2
4
6
8
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D = 5A
0.002
0.004
0.006
0.008
0.01
0.012
0
5
10
15
20
25
30
I
D, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
-55
℃
25
℃
85
℃
150
℃
125
℃
V
GS = 4.5V
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
V
GS = 4.5V, ID = 5A
V
GS = 3.0V, ID = 5A
V
GS = 2.5V, ID = 5A
0
2
4
6
8
10
12
14
16
18
20
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS = 5V
-55
℃
25
℃
85
℃
125
℃
150
℃


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