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S30RCC Datasheet(PDF) 2 Page - Vishay Siliconix |
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S30RCC Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 3 page Document Number: 60073 Revision 01-May-03 www.vishay.com 166 S30R / A30R, S30V / A30V Vishay Thin Film VISHAY THIN FILM • FRANCE +33.4.93.37.28.24 FAX: +33.4.93.37.27.31 • GERMANY +49.9287.710 FAX: +49 9287.70435 • ISRAEL +972.3.557.0945 FAX: +972.3.558.9121 • ITALY + 39.2.300.11919 FAX: +39.2.300.11999 • JAPAN +81.3.5464.6411 FAX: +81.3.5464.6433 • SINGAPORE +65.788.6668 FAX: +65.788.0988 • SWEDEN +46.8.594.70590 FAX: +46.8.594.70581 • UK +44 191 514 8237 FAX: +44 1953 457 722 • USA: (610) 407-4800 FAX: (610) 640-9081 SUBSTRATE ALUMINA1 SILICON Thickness (Mils) 10 ± 2 14 ± 2 Isolation Layer None SiO 2 (10,000 Å Min.) Metallization Gold (15,000 Å) Gold (15,000 Å) Die Size (X) 30 x 30 ± 3 MIL 30 x 30 ± 3 MIL Terminations 4 Mils Square Min. 4 Mils Square Min. Packaging Standard 2" Square Waffle Pack (400 Max. per Package) DIMENSIONS 1 Alumina has the benefit of the higher thermal conductivity and superior high frequency characteristics, however the resistance range is limited by the poorer line resolution versus silicon, because of the surface finish. Visual Criteria MIL-STD-833 Method 2032 Class H Thermal Shock (MIL-STD-202, Method 107, Test Condition C) 0.05% Max. ∆R/R (0.02% Typical) High Temperature Exposure (125 °C, 100 Hours in Air) 0.10% Max. ∆R/R (0.07% Typical) Low Temperature Operation (MIL-PRF-55342 Paragraph 4.7.4) 0.05% Max. ∆R/R (0.025% Typical) Moisture Resistance (MIL-STD-202 Method 106) 0.25% Max. ∆R/R (0.05% Typical) Short Time Overload (5 x Rated Power 25 °C, 5 sec.) 0.25% Max. ∆R/R (0.05% Typical) Resistance Ratio Accuracy ± 2% Standard or ± 0.1 ohm whichever is greater (0.05% available) Resistive Element Tamelox® Termination Pads Gold Substrate Material Silicon or Alumina T X X Center Tap Chip Resistor MECHANICAL SPECIFICATIONS FULL LOT TRACEABILITY TO WAFER LEVEL |
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