DMG2301U

Document number: DS31848 Rev. 6 - 3

4 of 7

www.diodes.com

October 2017

© Diodes Incorporated

DMG2301U

0

2

4

6

8

10

0.2

0.4

0.6

0.8

1.0

1.2

Fig. 8 Diode Forward Voltage vs. Current

-V

, SOURCE-DRAIN VOLTAGE (V)

SD

T = 25癈

A

10

100

1,000

0

4

8

12

16

20

Fig. 9 Typical Total Capacitance

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

C

iss

f = 1MHz

0

4

8

12

16

20

Fig. 10 Typical Leakage Current vs. Drain-Source Voltage

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

1

10

100

1,000

10,000

-I

,

L

E

A

K

A

G

E

C

U

R

R

E

N

T

(

n

A

)

D

S

S

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0

0.4

0.8

1.2

1.6

-

V

,

G

A

T

E

T

H

R

E

S

H

O

L

D

V

O

L

T

A

G

E

(

V

)

G

S

(

T

H

)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

I = -1mA

D

I = -250µA

D

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 11 SOA, Safe Operation Area

0.01

0.1

1

10

100

0.1

1

10

100

Limited

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

T

= 150°C

J (m ax )

T = 25°C

A

V

= 4.5V

GS

Single Pulse

DUT on 1 * MRP Board

Figure 11 SOA, Safe Operation Area

NOT RECOMMENDED FOR NEW DESIGN

USE DMG2301L