DMC3025LSDQ

Document number: DS40186 Rev. 1 - 2

2 of 11

www.diodes.com

October 2017

© Diodes Incorporated

DMC3025LSDQ

Maximum Ratings N-CHANNEL

Characteristic

Symbol

Value

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Steady

State

6.5

5.1

A

t<10s

8.5

6.8

A

Steady

State

5.3

4.1

A

t<10s

7.0

5.5

A

Maximum Continuous Body Diode Forward Current (Note 6)

2

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

60

A

Pulsed Body Diode Current (10µs pulse, duty cycle = 1%)

60

A

Avalanche Current (Note 8) L = 0.1mH

14

A

Avalanche Energy (Note 8) L = 0.1mH

10

mJ

Maximum Ratings P-CHANNEL

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Steady

State

-4.2

-3.2

A

t<10s

-5.5

-4.3

A

Steady

State

-3.5

-2.3

A

t<10s

-4.1

-3.2

A

Maximum Continuous Body Diode Forward Current (Note 6)

-2

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

-30

A

Pulsed Body Diode Current (10µs pulse, duty cycle = 1%)

-30

A

Avalanche Current (Note 8) L = 0.1mH

-14

A

Avalanche Energy (Note 8) L = 0.1mH

10

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 7)

1.2

W

0.77

Thermal Resistance, Junction to Ambient (Note 7)

Steady State

104

°C/W

t<10s

62

Total Power Dissipation (Note 6)

1.5

W

0.95

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

83

°C/W

t<10s

49

Thermal Resistance, Junction to Case (Note 6)

15

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.