CS50N06 datasheet(3/6 Pages) THINKISEMI

Part #	CS50N06

Description	50A,60V Heatsink Planar N-Channel Power MOSFET

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Manufacturer	THINKISEMI [Thinki Semiconductor Co., Ltd.]

Direct Link	http://www.thinkisemi.com

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0

5

10

15

20

25

30

35

0

2

4

6

8

10

12

V

DS = 30V

V

DS = 48V

※ Note : I

D

= 50A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

500

1000

1500

2000

2500

3000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※ Notes :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

10

0

10

1

10

2

175℃

※ Notes :

1. V

GS = 0V

2. 250μ s Pulse Test

25℃

V

SD, Source-Drain voltage [V]

0

50

100

150

200

0.00

0.01

0.02

0.03

0.04

0.05

V

GS = 20V

V

GS = 10V

※ Note : T

J = 25

℃

I

D, Drain Current [A]

246

8

10

0

10

1

10

2

175℃

25℃

-55℃

※ Notes :

1. V

DS = 30V

2. 250μ s Pulse Test

V

GS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

0

10

1

10

2

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom: 4.5 V

※ Note :

1. 250μ s Pulse Test

2. T

C = 25

℃

V

DS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

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Page 3/6

Rev.08C

CS50N06

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CS50N06 Datasheet(PDF) 3 Page - Thinki Semiconductor Co., Ltd.

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