OM55N10SA - OM75N06SC

3.1

205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246

OM75N06SC, OM75N06SA, OM75N05SC, OM75N05SA

g

fs

(S)

80

60

40

20

0

0

20

406080

I

D

(A)

T

J

= -40°C

T

J

= 25°C

T

J

= 125°C

V

DS

> I

D(on)

x R

DS(on)max

R

DS(on)

14

12

10

8

6

0

20

406080

I

D

(A)

V

GS

= 10V

V

GS

(V)

12

8

4

0

0

40

80

120

Q

g

(nC)

V

DS

= 25V

I

D

= 40A

C(nF)

8

6

4

2

0

0

10

203040

V

DS

(V)

V

DS

= 0

f = 1MHz

C

ies

C

oes

C

res

V

GS(th)

(norm)

1.2

1.0

0.8

0.6

0.4

-50

0

50

100

T

J

(°C)

V

DS

= V

GS

I

D

= 250µA

R

DS(on)

(norm)

-50

V

GS

= 10V

I

D

= 40A

1.5

1.0

0.5

0

0

50

100

T

J

(°C)

Transconductance

Static Drain-Source On Resistance

Capacitance Variations

Normalized On Resistance

vs Temperature

Gate Charge vs Gate-Source Voltage

Normalized Gate Threshold

Voltage vs Temperature