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NCP1602BEASNT1G Datasheet(PDF) 6 Page - ON Semiconductor

Part # NCP1602BEASNT1G
Description  Enhanced, High-Efficiency Power Factor Controller
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP1602BEASNT1G Datasheet(HTML) 6 Page - ON Semiconductor

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6
Table 6. TYPICAL ELECTRICAL CHARACTERISTICS
(Conditions: VCC = 18 V, TJ from −40°C to +125°C, unless otherwise specified) (Note 3)
Symbol
Unit
Max
Typ
Min
Rating
REGULATION BLOCK
Vctrl
Vctrl,min
Vctrl,max
VCTRL pin Voltage (Vctrl):
− @ VFB = 2 V (OTA is sourcing 20 mA)
− @ VFB = 3 V (OTA is sinking 20 mA)
4.5
0.5
V
V
Vout,L / VREF2
Ratio (Vout Low Detect Threshold / VREF) (guaranteed by design)
95.5
%
Hout,L / VREF2
Ratio (VoutLow Detect Hysteresis / VREF) (guaranteed by design)
0.35
%
IBOOST
VCTRL pin Source Current when (VOUT Low Detect) is activated
147
220
277
mA
CURRENT SENSE AND ZERO CURRENT DETECTION BLOCKS
VCS(th)
Current Sense Voltage Reference
450
500
550
mV
VCS,OVS(th)
Current Sense Overstress Voltage Reference
675
750
825
mV
tLEB,OVS
“Overstress” Leading edge Blanking Time (guaranteed by design)
250
ns
tLEB,OCP
“Over−Current Protection” Leading edge Blanking Time (guaranteed by design)
400
ns
tOCP
Over−Current Protection Delay from VCS/ZCD>VCS(th) to
DRV low (dVCS/ZCD / dt = 10 V/ms)
40
200
ns
VZCD(th)H
Zero Current Detection, VCS/ZCD rising
8
35
62
mV
VZCD(th)L
Zero Current Detection, VCS/ZCD falling
−68
−46
−25
mV
VZCD(hyst)
Hysteresis of the Zero Current Detection Comparator
46
84
mV
To discuss versus what esd protection will be used
VCL(pos)
CS/ZCD Positive Clamp @ ICS/ZCD = 5 mA (guaranteed by design)
9.5
V
tZCD
(VCS/ZCD < VZCD(th)L) to (DRV high)
60
200
ns
tSYNC
Minimum ZCD Pulse Width
110
200
ns
tWDG
Watch Dog Timer
80
200
320
ms
tWDG(OS)
Watch Dog Timer in “OverStress” Situation
400
800
1200
ms
IZCD(gnd)
Source Current for CS/ZCD pin impedance Testing
50
mA
IZCD(Vcc)
Pull−up current source referenced to Vcc for open pin detection
200
nA
STATIC OVP
DMIN
Duty Cycle, VFB = 3 V ( When low clamp of Vctrl is reached)
0
%
ON−TIME CONTROL (Options [*E*], [*B*], [*F*], [*C*] for maximum tON value)
ton,LL,B
Maximum On Time, avg(Vcs) = 0.9 V and Vctrl maximum (CrM)
22
25
28
ms
ton,HL,B
Maximum On Time, avg(Vcs) = 2.8 V and Vctrl maximum (CrM)
7.49
8.33
9.16
ms
ton,LL,C
Maximum On Time, avg(Vcs) = 0.9 V and Vctrl maximum (CrM)
22
25
28
ms
ton,HL,C
Maximum On Time, avg(Vcs) = 2.8 V and Vctrl maximum (CrM)
7.49
8.40
9.16
ms
ton,LL,E
Maximum On Time, avg(Vcs) = 0.9 V and Vctrl maximum (CrM)
11.4
12.5
13.6
ms
ton,HL,E
Maximum On Time, avg(Vcs) = 2.8 V and Vctrl maximum (CrM)
3.75
4.17
4.59
ms
ton,LL,F
Maximum On Time, avg(Vcs) = 0.9 V and Vctrl maximum (CrM)
11.4
12.5
13.6
ms
ton,HL,F
Maximum On Time, avg(Vcs) = 2.8 V and Vctrl maximum (CrM)
3.75
4.20
4.59
ms
Kton,LL−HL
tON @LL over tON @HL ratio (all tON versions)
3
w/o
Specifying max tON,min means tON,min can go down to zero
ton,LL,min
Minimum On Time, avg(Vcs) = 0.9 V
(not tested, guaranteed by design)
300
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. The above specification gives the targeted values of the parameters. The final specification will be available once the complete circuit
characterization has been performed.


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