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NCP1602BEASNT1G Datasheet(PDF) 6 Page - ON Semiconductor |
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NCP1602BEASNT1G Datasheet(HTML) 6 Page - ON Semiconductor |
6 / 23 page NCP1602 www.onsemi.com 6 Table 6. TYPICAL ELECTRICAL CHARACTERISTICS (Conditions: VCC = 18 V, TJ from −40°C to +125°C, unless otherwise specified) (Note 3) Symbol Unit Max Typ Min Rating REGULATION BLOCK Vctrl Vctrl,min Vctrl,max VCTRL pin Voltage (Vctrl): − @ VFB = 2 V (OTA is sourcing 20 mA) − @ VFB = 3 V (OTA is sinking 20 mA) − − 4.5 0.5 − − V V Vout,L / VREF2 Ratio (Vout Low Detect Threshold / VREF) (guaranteed by design) − 95.5 − % Hout,L / VREF2 Ratio (VoutLow Detect Hysteresis / VREF) (guaranteed by design) − 0.35 − % IBOOST VCTRL pin Source Current when (VOUT Low Detect) is activated 147 220 277 mA CURRENT SENSE AND ZERO CURRENT DETECTION BLOCKS VCS(th) Current Sense Voltage Reference 450 500 550 mV VCS,OVS(th) Current Sense Overstress Voltage Reference 675 750 825 mV tLEB,OVS “Overstress” Leading edge Blanking Time (guaranteed by design) − 250 − ns tLEB,OCP “Over−Current Protection” Leading edge Blanking Time (guaranteed by design) − 400 − ns tOCP Over−Current Protection Delay from VCS/ZCD>VCS(th) to DRV low (dVCS/ZCD / dt = 10 V/ms) − 40 200 ns VZCD(th)H Zero Current Detection, VCS/ZCD rising 8 35 62 mV VZCD(th)L Zero Current Detection, VCS/ZCD falling −68 −46 −25 mV VZCD(hyst) Hysteresis of the Zero Current Detection Comparator 46 84 − mV To discuss versus what esd protection will be used VCL(pos) CS/ZCD Positive Clamp @ ICS/ZCD = 5 mA (guaranteed by design) − 9.5 − V tZCD (VCS/ZCD < VZCD(th)L) to (DRV high) − 60 200 ns tSYNC Minimum ZCD Pulse Width − 110 200 ns tWDG Watch Dog Timer 80 200 320 ms tWDG(OS) Watch Dog Timer in “OverStress” Situation 400 800 1200 ms IZCD(gnd) Source Current for CS/ZCD pin impedance Testing − 50 − mA IZCD(Vcc) Pull−up current source referenced to Vcc for open pin detection − 200 − nA STATIC OVP DMIN Duty Cycle, VFB = 3 V ( When low clamp of Vctrl is reached) − − 0 % ON−TIME CONTROL (Options [*E*], [*B*], [*F*], [*C*] for maximum tON value) ton,LL,B Maximum On Time, avg(Vcs) = 0.9 V and Vctrl maximum (CrM) 22 25 28 ms ton,HL,B Maximum On Time, avg(Vcs) = 2.8 V and Vctrl maximum (CrM) 7.49 8.33 9.16 ms ton,LL,C Maximum On Time, avg(Vcs) = 0.9 V and Vctrl maximum (CrM) 22 25 28 ms ton,HL,C Maximum On Time, avg(Vcs) = 2.8 V and Vctrl maximum (CrM) 7.49 8.40 9.16 ms ton,LL,E Maximum On Time, avg(Vcs) = 0.9 V and Vctrl maximum (CrM) 11.4 12.5 13.6 ms ton,HL,E Maximum On Time, avg(Vcs) = 2.8 V and Vctrl maximum (CrM) 3.75 4.17 4.59 ms ton,LL,F Maximum On Time, avg(Vcs) = 0.9 V and Vctrl maximum (CrM) 11.4 12.5 13.6 ms ton,HL,F Maximum On Time, avg(Vcs) = 2.8 V and Vctrl maximum (CrM) 3.75 4.20 4.59 ms Kton,LL−HL tON @LL over tON @HL ratio (all tON versions) − 3 − w/o Specifying max tON,min means tON,min can go down to zero ton,LL,min Minimum On Time, avg(Vcs) = 0.9 V (not tested, guaranteed by design) − 300 − ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. The above specification gives the targeted values of the parameters. The final specification will be available once the complete circuit characterization has been performed. |
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