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NCP1602ABASNT1G Datasheet(PDF) 5 Page - ON Semiconductor |
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NCP1602ABASNT1G Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 23 page NCP1602 www.onsemi.com 5 Table 6. TYPICAL ELECTRICAL CHARACTERISTICS (Conditions: VCC = 18 V, TJ from −40°C to +125°C, unless otherwise specified) (Note 3) Symbol Rating Min Typ Max Unit START−UP AND SUPPLY CIRCUIT VCC,on Start−Up Threshold, VCC increasing: [**C] Versions [**A] Versions 9.75 15.80 10.50 17.00 11.25 18.20 V VCC,off Minimum Operating Voltage, VCC falling 8.50 9.00 9.50 V VCC,hyst Hysteresis (VCC,on − VCC,off) [**C] Versions [**A] Versions 0.75 6.00 1.50 8.00 − − V ICC,start Maximum Start−Up Current, for VCC lower than 9.4 V, below startup voltage − − 480 mA ICC,op1 Operating Consumption, no switching. − 0.5 1.00 mA ICC,op2 Operating Consumption, 50 kHz switching, no load on DRV pin − 2.00 3.00 mA FREQUENCY FOLD−BACK DEAD TIME FOR CONFIGURATIONS L2 = B, C, E, F @ Km = 2.28 tDT,B,1 Dead−Time, Vctrl = 0.65V w/ B config 5.73 7.64 9.55 ms tDT,B,2 Dead−Time, Vctrl = 0.75V w/ B config 2.91 3.88 4.85 ms tDT,C,1 Dead−Time, Vctrl = 0.65V w/ C config 8.90 11.90 14.84 ms tDT,C,2 Dead−Time, Vctrl = 0.75V w/ C config 5.69 7.50 9.48 ms tDT,E,1 Dead−Time, Vctrl = 0.65V w/ E config 9.96 13.28 16.60 ms tDT,E,2 Dead−Time, Vctrl = 0.75V w/ E config 6.70 8.93 10.80 ms tDT,F,1 Dead−Time, Vctrl = 0.65V w/ F config 13.00 17.30 21.66 ms tDT,F,2 Dead−Time, Vctrl = 0.75V w/ F config 9.97 13.10 16.61 ms CrM TO DCM THRESHOLD AND HYSTERESIS Vctrl,th,B Vctrl threshold CrM to DCM mode w/ B config 0.923 1.026 1.129 V Vctrl,th,C Vctrl threshold CrM to DCM mode w/ C config 1.16 1.29 1.43 V Vctrl,th,E Vctrl threshold CrM to DCM mode w/ E config 1.398 1.553 1.708 V Vctrl,th,F Vctrl threshold CrM to DCM mode w/ F config 1.865 2.08 2.29 V SKIP CONTROL ([B**] & [D**] Versions) VSKIP−H Vctrl pin SKIP Level, Vcontrol rising 555 617 678 mV VSKIP−L Vctrl pin SKIP Level, Vcontrol falling 516 593 665 mV VSKIP−Hyst Vctrl pin SKIP Hysteresis − 30 − mV GATE DRIVE tR Output voltage rise−time @ CL = 1 nF, 10−90% of output signal − 30 − ns tF Output voltage fall−time @ CL = 1 nF, 10−90% of output signal − 20 − ns ROH Source resistance @ 200 mV under High VCC − 10 − Ω ROL Sink resistance @200 mV above Low VCC − 7 − Ω VDRV,low DRV pin level for VCC = VCC,off +200 mV (10 kΩ resistor between DRV and GND) 8.0 − − V VDRV,high DRV pin level at VCC = 30 V (RL = 33 kΩ & CL = 1 nF) 10 12 14 V REGULATION BLOCK VREF Feedback Voltage Reference 2.44 2.50 2.56 V IEA Error Amplifier Current Capability, Sinking and Sourcing 15 20 26 mA GEA Error Amplifier Gain 110 200 290 mS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. The above specification gives the targeted values of the parameters. The final specification will be available once the complete circuit characterization has been performed. |
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