NCP1602ABASNT1G datasheet(5/23 Pages) ONSEMI

Part #	NCP1602ABASNT1G

Description	Enhanced, High-Efficiency Power Factor Controller

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Manufacturer	ONSEMI [ON Semiconductor]

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NCP1602

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Table 6. TYPICAL ELECTRICAL CHARACTERISTICS

(Conditions: VCC = 18 V, TJ from −40°C to +125°C, unless otherwise specified) (Note 3)

Symbol

Rating

Min

Typ

Max

Unit

START−UP AND SUPPLY CIRCUIT

VCC,on

Start−Up Threshold, VCC increasing:

[**C] Versions

[**A] Versions

9.75

15.80

10.50

17.00

11.25

18.20

V

VCC,off

Minimum Operating Voltage, VCC falling

8.50

9.00

9.50

V

VCC,hyst

Hysteresis (VCC,on − VCC,off)

[**C] Versions

[**A] Versions

0.75

6.00

1.50

8.00

−

V

ICC,start

Maximum Start−Up Current, for VCC lower than 9.4 V, below startup voltage

−

480

mA

ICC,op1

Operating Consumption, no switching.

−

0.5

1.00

mA

ICC,op2

Operating Consumption, 50 kHz switching, no load on DRV pin

−

2.00

3.00

mA

FREQUENCY FOLD−BACK DEAD TIME FOR CONFIGURATIONS L2 = B, C, E, F @ Km = 2.28

tDT,B,1

Dead−Time, Vctrl = 0.65V w/ B config

5.73

7.64

9.55

ms

tDT,B,2

Dead−Time, Vctrl = 0.75V w/ B config

2.91

3.88

4.85

ms

tDT,C,1

Dead−Time, Vctrl = 0.65V w/ C config

8.90

11.90

14.84

ms

tDT,C,2

Dead−Time, Vctrl = 0.75V w/ C config

5.69

7.50

9.48

ms

tDT,E,1

Dead−Time, Vctrl = 0.65V w/ E config

9.96

13.28

16.60

ms

tDT,E,2

Dead−Time, Vctrl = 0.75V w/ E config

6.70

8.93

10.80

ms

tDT,F,1

Dead−Time, Vctrl = 0.65V w/ F config

13.00

17.30

21.66

ms

tDT,F,2

Dead−Time, Vctrl = 0.75V w/ F config

9.97

13.10

16.61

ms

CrM TO DCM THRESHOLD AND HYSTERESIS

Vctrl,th,B

Vctrl threshold CrM to DCM mode w/ B config

0.923

1.026

1.129

V

Vctrl,th,C

Vctrl threshold CrM to DCM mode w/ C config

1.16

1.29

1.43

V

Vctrl,th,E

Vctrl threshold CrM to DCM mode w/ E config

1.398

1.553

1.708

V

Vctrl,th,F

Vctrl threshold CrM to DCM mode w/ F config

1.865

2.08

2.29

V

SKIP CONTROL ([B**] & [D**] Versions)

VSKIP−H

Vctrl pin SKIP Level, Vcontrol rising

555

617

678

mV

VSKIP−L

Vctrl pin SKIP Level, Vcontrol falling

516

593

665

mV

VSKIP−Hyst

Vctrl pin SKIP Hysteresis

−

30

−

mV

GATE DRIVE

tR

Output voltage rise−time @ CL = 1 nF, 10−90% of output signal

−

30

−

ns

tF

Output voltage fall−time @ CL = 1 nF, 10−90% of output signal

−

20

−

ns

ROH

Source resistance @ 200 mV under High VCC

−

10

−

Ω

ROL

Sink resistance @200 mV above Low VCC

−

7

−

Ω

VDRV,low

DRV pin level for VCC = VCC,off +200 mV (10 kΩ resistor between DRV and GND)

8.0

−

V

VDRV,high

DRV pin level at VCC = 30 V (RL = 33 kΩ & CL = 1 nF)

10

12

14

V

REGULATION BLOCK

VREF

Feedback Voltage Reference

2.44

2.50

2.56

V

IEA

Error Amplifier Current Capability, Sinking and Sourcing

15

20

26

mA

GEA

Error Amplifier Gain

110

200

290

mS

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. The above specification gives the targeted values of the parameters. The final specification will be available once the complete circuit

characterization has been performed.

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