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M29W400BB90ZA6T Datasheet(PDF) 10 Page - STMicroelectronics |
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M29W400BB90ZA6T Datasheet(HTML) 10 Page - STMicroelectronics |
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10 / 25 page  M29W400BT, M29W400BB 10/25 Erase Suspend Command. The Erase Suspend Command may be used to temporarily suspend a Block Erase operation and return the memory to Read mode. The command requires one Bus Write operation. The Program/Erase Controller will suspend within 15µs of the Erase Suspend Command being is- sued. Once the Program/Erase Controller has stopped the memory will be set to Read mode and the Erase will be suspended. If the Erase Suspend command is issued during the period when the memory is waiting for an additional block (before the Program/Erase Controller starts) then the Erase is suspended immediately and will start im- mediately when the Erase Resume Command is issued. It will not be possible to select any further blocks for erasure after the Erase Resume. During Erase Suspend it is possible to Read and Program cells in blocks that are not being erased; both Read and Program operations behave as normal on these blocks. Reading from blocks that are being erased will output the Status Register. It is also possible to enter the Auto Select mode: the memory will behave as in the Auto Select mode on all blocks until a Read/Reset command returns the memory to Erase Suspend mode. Erase Resume Command. The Erase Resume command must be used to restart the Program/ Erase Controller from Erase Suspend. An erase can be suspended and resumed more than once. Table 9. Program, Erase Times and Program, Erase Endurance Cycles (TA = 0 to 70°C or –40 to 85°C) Note: 1. TA =25°C, VCC =3.3V. Parameter Min Typ (1) Typical after 100k W/E Cycles (1) Max Unit Chip Erase (All bits in the memory set to ‘0’) 2.5 2.5 sec Chip Erase 6 6 35 sec Block Erase (64 Kbytes) 0.8 0.8 6 sec Program (Byte or Word) 10 10 200 µs Chip Program (Byte by Byte) 5.5 5.5 30 sec Chip Program (Word by Word) 2.8 2.8 15 sec Program/Erase Cycles (per Block) 100,000 cycles |
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