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2SK3442 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SK3442 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page 2SK3442 2002-08-29 3 Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS Gate-source voltage VGS (V) ID – VGS Gate-source voltage VGS (V) VDS – VGS Drain current ID (A) ïYfsï – ID Drain current ID (A) RDS (ON) – ID 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 VGS = 6 V Common source Tc = 25°C Pulse test 6.5 7 10 15 8 4 0 1 2 3 5 23 04 8 16 12 20 Common source Tc = 25°C Pulse test ID = 45 A 11 500 1 10 100 0.1 1 10 100 Common source VDS = 10 V Pulse test 50 30 5 3 25 -55 Tc = 100°C 30 50 35 0.3 0.5 300 0 4 8 16 12 20 -55 Common source VDS = 10 V Pulse test Tc = 100°C 25 0 20 40 60 80 100 10 7 200 160 120 80 40 0 0 4 8 12 16 20 VGS = 6 V Common source Tc = 25°C Pulse test 6.5 7.5 8 500 10 100 1 10 100 1000 Common source Tc = 25°C Pulse test 50 30 300 500 30 50 35 15 VGS = 10 V 300 3 5 1 |
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