 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
M29W400BB Datasheet(PDF) 1 Page - STMicroelectronics |
|
||||||||||||||||||||||||||||||
M29W400BB Datasheet(HTML) 1 Page - STMicroelectronics |
|
|
1 / 25 page 
1/25 June 2001 M29W400BT M29W400BB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s ACCESS TIME: 55ns s PROGRAMMING TIME – 10µs per Byte/Word typical s 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameterand8MainBlocks s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming s TEMPORARY BLOCK UNPROTECTION MODE s LOW POWER CONSUMPTION – Standby and Automatic Standby s 100,000 PROGRAM/ERASE CYCLES per BLOCK s 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year s ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W400BT: 00EEh – Bottom Device Code M29W400BB: 00EFh Figure 1. Logic Diagram AI02934 18 A0-A17 W DQ0-DQ14 VCC M29W400BT M29W400BB E VSS 15 G RP DQ15A–1 BYTE RB 44 1 TSOP48 (N) 12 x 20mm SO44 (M) TFBGA48 (ZA) 6 x 8 ball array FBGA |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
