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NTE2346 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE2346 Datasheet(HTML) 1 Page - NTE Electronics |
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1 / 2 page  NTE2345 (NPN) & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power Amplifier Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT–82 type package designed for use in audio output stages and general amplifier and switching applications.. Features: D High DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V D Junction Temperature to +150°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO 120V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Base Voltage, VCBO 120V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter–Base Voltage, VEBO 5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current, IC Continuous 6A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak (tp ≤ 10ms, δ ≤ 0.1) 10A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Base Current, IB 150mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Power Dissipation (TC = +25°C), PD 60W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Junction Temperature, TJ +150 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –65 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance, Junction–to–Case, RthJC 2.08K/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance, Junction–to–Ambient, RthJA 100K/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO IE = 0, VCBO = 120V – – 0.2 mA IE = 0, VCBO = 120V, TJ = +150°C – – 2mA mA ICEO IB = 0, VCEO = 60V – – 0.5 mA Emitter Cutoff Current IEBO IC = 0, VEBO = 5V – – 5 mA DC Current Gain hFE IC = 500mA, VCEO = 3V, Note 1 – 2700 – IC = 3A, VCEO = 3V, Note 1 750 – – IC = 6A, VCEO = 3V, Note 1 – 400 – Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. |
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