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IXFT30N50 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFT30N50 Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 4 page 1 - 4 © 2000 IXYS All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 500 V V DGR T J = 25 °C to 150°C; R GS = 1 MW 500 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C 30N50 30 A 32N50 32 A I DM T C = 25°C 30N50 120 A pulse width limited by T JM 32N50 128 A I AR T C = 25°C 30N50 30 A 32N50 32 A E AS T C = 25°C 1.5 J E AR I D = 25°C 45 mJ dv/dt I S £ I DM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns T J £ 150°C, RG = 2 W P D T C = 25°C 360 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6 mm (0.062 in.) from case for 10 s 300 °C M d Mounting torque 1.13/10 Nm/lb.in. Weight 6 g Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = 1 mA 500 V V DSS temperature coefficient 0.102 %/K V GS(th) V DS = VGS, ID = 4 mA 2 4 V V GS(th) temperature coefficient -0.206 %/K I GSS V GS = ±20 VDC, VDS = 0 ±100 nA I DSS V DS = 0.8 • VDSS T J = 25 °C 200 mA V GS = 0 V T J = 125°C1 mA R DS(on) V GS = 10 V, ID = 15A 32N50 0.15 W 30N50 0.16 W Pulse test, t £ 300 ms, duty cycle d £ 2 % HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low t rr, HDMOS TM Family TO-247 AD (IXFH) Features • International standard packages • Low R DS (on) HDMOS TM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Diode Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls Advantages • Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) • Space savings • High power density G = Gate, D = Drain, S = Source, TAB = Drain 97518H (6/99) V DSS I D25 R DS(on) 500 V 30 A 0.16 W 500 V 32 A 0.15 W t rr £ 250 ns IXFH/IXFT 30N50 IXFH/IXFT 32N50 D (TAB) TO-268 (D3) Case Style (TAB) G S IXYS reserves the right to change limits, test conditions, and dimensions. |
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