1 - 4

© 2000 IXYS All rights reserved

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

V

DGR

T

J

= 25

°C to 150°C; R

500

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

30N50

30

A

32N50

32

A

I

DM

T

30N50

120

A

pulse width limited by T

JM

32N50

128

A

I

AR

T

30N50

30

A

32N50

32

A

E

AS

T

1.5

J

E

AR

I

45

mJ

dv/dt

I

S

£ I

5

V/ns

T

P

D

T

360

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

M

d

Mounting torque

1.13/10

Nm/lb.in.

Weight

6

g

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

500

V

V

DSS

temperature coefficient

0.102

%/K

V

GS(th)

V

2

4

V

V

-0.206

%/K

I

GSS

V

±100

nA

I

DSS

V

T

25

°C

200

mA

V

T

mA

R

DS(on)

V

32N50

0.15

W

30N50

0.16

W

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

Power MOSFETs

N-Channel Enhancement Mode

High dv/dt, Low t

TO-247 AD (IXFH)

Features

rated

- easy to drive and to protect

Applications

power supplies

Advantages

(isolated mounting screw hole)

G = Gate,

D = Drain,

S = Source,

TAB = Drain

97518H (6/99)

V

DSS

I

D25

R

DS(on)

500 V

30 A

0.16

W

500 V

32 A

0.15

W

t

IXFH/IXFT 30N50

IXFH/IXFT 32N50

D (TAB)

TO-268 (D3) Case Style

(TAB)

G

S

IXYS reserves the right to change limits, test conditions, and dimensions.