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IXFH32N50 Datasheet(PDF) 1 Page - IXYS Corporation

Part No. IXFH32N50
Description  HiPerFET Power MOSFETs
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFH32N50 Datasheet(HTML) 1 Page - IXYS Corporation

  IXFH32N50 Datasheet HTML 1Page - IXYS Corporation IXFH32N50 Datasheet HTML 2Page - IXYS Corporation IXFH32N50 Datasheet HTML 3Page - IXYS Corporation IXFH32N50 Datasheet HTML 4Page - IXYS Corporation  
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© 2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
500
V
V
DGR
T
J
= 25
°C to 150°C; R
GS = 1 MW
500
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C = 25°C
30N50
30
A
32N50
32
A
I
DM
T
C = 25°C
30N50
120
A
pulse width limited by T
JM
32N50
128
A
I
AR
T
C = 25°C
30N50
30
A
32N50
32
A
E
AS
T
C = 25°C
1.5
J
E
AR
I
D = 25°C
45
mJ
dv/dt
I
S
£ I
DM, di/dt £ 100 A/ms, VDD £ VDSS,
5
V/ns
T
J £ 150°C, RG = 2 W
P
D
T
C = 25°C
360
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°C
M
d
Mounting torque
1.13/10
Nm/lb.in.
Weight
6
g
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS = 0 V, ID = 1 mA
500
V
V
DSS
temperature coefficient
0.102
%/K
V
GS(th)
V
DS = VGS, ID = 4 mA
2
4
V
V
GS(th) temperature coefficient
-0.206
%/K
I
GSS
V
GS = ±20 VDC, VDS = 0
±100
nA
I
DSS
V
DS = 0.8 • VDSS
T
J =
25
°C
200
mA
V
GS = 0 V
T
J = 125°C1
mA
R
DS(on)
V
GS = 10 V, ID = 15A
32N50
0.15
W
30N50
0.16
W
Pulse test, t
£ 300 ms, duty cycle d £ 2 %
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr, HDMOS
TM Family
TO-247 AD (IXFH)
Features
International standard packages
Low R
DS (on) HDMOS
TM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Diode
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
G = Gate,
D = Drain,
S = Source,
TAB = Drain
97518H (6/99)
V
DSS
I
D25
R
DS(on)
500 V
30 A
0.16
W
500 V
32 A
0.15
W
t
rr £ 250 ns
IXFH/IXFT 30N50
IXFH/IXFT 32N50
D (TAB)
TO-268 (D3) Case Style
(TAB)
G
S
IXYS reserves the right to change limits, test conditions, and dimensions.


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