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IXFH26N50 Datasheet(PDF) 1 Page - IXYS Corporation

Part No. IXFH26N50
Description  HiPerFET Power MOSFETs
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFH26N50 Datasheet(HTML) 1 Page - IXYS Corporation

  IXFH26N50 Datasheet HTML 1Page - IXYS Corporation IXFH26N50 Datasheet HTML 2Page - IXYS Corporation IXFH26N50 Datasheet HTML 3Page - IXYS Corporation IXFH26N50 Datasheet HTML 4Page - IXYS Corporation  
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© 1999 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
500
V
V
DGR
T
J
= 25
°C to 150°C; R
GS = 1 MΩ
500
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C
= 25
°C
21N50
21
A
24N50
24
A
26N50
26
A
I
DM
T
C
= 25
°C, pulse width limited by T
JM
21N50
84
A
24N50
96
A
26N50
104
A
I
AR
T
C
= 25
°C
21N50
21
A
24N50
24
A
26N50
26
A
E
AR
T
C
= 25
°C30
mJ
dv/dt
I
S
≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,5
V/
ns
T
J
≤ 150°C, R
G = 2 Ω
P
D
T
C
= 25
°C
300
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°C
M
d
Mounting torque
1.13/10
Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D = 250 µA
500
V
V
GS(th)
V
DS
= V
GS, ID = 4 mA
2
4
V
I
GSS
V
GS
=
±20 V
DC, VDS = 0
±100
nA
I
DSS
V
DS
= 0.8 • V
DSS
T
J =
25
°C
200
µA
V
GS = 0 V
T
J = 125°C1
mA
N-Channel Enhancement Mode
High dv/dt, Low t
rr, HDMOS
TM Family
TO-247 AD (IXFH)
TO-204 AE (IXFM)
D
G
Features
• International standard packages
• Low R
DS (on) HDMOS
TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power surface mountable package
• High power density
G = Gate,
D = Drain,
S = Source,
TAB = Drain
91525H (9/99)
(TAB)
V
DSS
I
D25
R
DS(on)
IXFH/IXFM21N50
500 V 21 A 0.25
IXFH/IXFM/IXFT24N50
500 V 24 A 0.23
IXFH/IXFT26N50
500 V 26 A 0.20
t
rr
≤≤≤≤ 250 ns
HiPerFETTM
Power MOSFETs
TO-268 (D3) Case Style
(TAB)
G
S


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