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IXFH26N50 Datasheet(PDF) 4 Page - IXYS Corporation

Part No. IXFH26N50
Description  HiPerFET Power MOSFETs
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFH26N50 Datasheet(HTML) 4 Page - IXYS Corporation

  IXFH26N50 Datasheet HTML 1Page - IXYS Corporation IXFH26N50 Datasheet HTML 2Page - IXYS Corporation IXFH26N50 Datasheet HTML 3Page - IXYS Corporation IXFH26N50 Datasheet HTML 4Page - IXYS Corporation  
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig.7
Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
Fig.9
Capacitance Curves
Fig.10 Source Current vs. Source to Drain Voltage
Fig.11 Transient Thermal Impedance
V
DS - Volts
1
10
100
0.1
1
10
100
Gate Charge - nCoulombs
0
25
50
75
100 125 150 175 200
0
1
2
3
4
5
6
7
8
9
10
V
SD - Volt
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0
5
10
15
20
25
30
35
40
45
50
V
DS - Volts
0
5
10
15
20
25
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Time - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
D=0.2
D=0.02
D=0.5
D=0.1
D=0.05
D=0.01
Single pulse
C
rss
C
oss
V
DS = 250V
I
D = 12.5A
I
G = 10mA
500
10µs
100µs
1ms
10ms
100ms
Limited by R
DS(on)
C
iss
T
J = 25°C
T
J = 125°C
f = 1 Mhz
V
DS = 25V
IXFH21N50
IXFH24N50
IXFH26N50
IXFM21N50
IXFM24N50
IXFM26N50
IXFT24N50
IXFT26N50


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