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IXFH21N50 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFH21N50 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 4 page  © 2004 IXYS All rights reserved 98718B(02/04) Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 500 V V DGR T J = 25 °C to 150°C; R GS = 1 MΩ 500 V V GS Continuous ±30 V V GSM Transient ±40 V I D25 T C = 25°C21 A I DM T C = 25°C, pulse width limited by TJM 84 A I AR T C = 25°C21 A E AR T C = 25°C 30 mJ E AS 1.5 mJ dv/dt I S ≤ I DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 15 V/ns T J ≤ 150°C, RG = 2 Ω P D T C = 25°C 280 W T J -55 to +150 °C T JM 150 °C T stg -55 to +150 °C T L 1.6 mm (0.063 in) from case for 10 s 300 °C M d Mounting torque 1.13/10 Nm/lb.in. Weight TO-247 6 g TO-268 4 g N-Channel Enhancement Mode Avalanche Rated, Low Q g, High dv/dt Features l IXYS advanced low Q g process l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low R DS (on) l Rated for unclamped Inductive load switching (UIS) rated l Molding epoxies meet UL 94 V-0 flammability classification Advantages l Easy to mount l Space savings l High power density Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = 250 µA 500 V V GS(th) V DS = VGS, ID = 4 mA 2.5 4.5 V I GSS V GS = ±30 VDC, VDS = 0 ±100 nA I DSS V DS = VDSS T J = 25 °C25 µA V GS = 0 V T J = 125 °C1 mA R DS(on) V GS = 10 V, ID = 0.5 ID25 0.25 Ω Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % TO-247 AD (IXFH) G = Gate D = Drain S = Source TAB = Drain HiPerFETTM Power MOSFETs Q-Class TO-268 (D3) ( IXFT) (TAB) G S V DSS = 500 V I D25 = 21 A R DS(on) = 0.25 Ω Ω Ω Ω Ω t rr ≤ ≤≤≤≤ 250 ns IXFH 21N50Q IXFT 21N50Q (TAB) |
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