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IXFH21N50 Datasheet(PDF) 4 Page - IXYS Corporation

Part No. IXFH21N50
Description  HiPerFET Power MOSFETs MOSFETs
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFH21N50 Datasheet(HTML) 4 Page - IXYS Corporation

  IXFH21N50 Datasheet HTML 1Page - IXYS Corporation IXFH21N50 Datasheet HTML 2Page - IXYS Corporation IXFH21N50 Datasheet HTML 3Page - IXYS Corporation IXFH21N50 Datasheet HTML 4Page - IXYS Corporation  
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 21N50Q
IXFT 21N50Q
IXYS MOSFETs and IGBTs are covered by one or more
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
6,404,065B1 6,162,665
6,534,343
6,583,505
of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
6,259,123B1 6,306,728B1 6,683,344
Fig. 11. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
VD S - Volts
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
1020
3040
5060
708090
Q G - nanoCoulombs
VDS = 250V
ID = 10.5A
IG = 10mA
Fig. 7. Input Adm ittance
0
5
10
15
20
25
30
35
3.5
4
4.5
5
5.5
6
6.5
VG S - Volts
TJ = 125ºC
25ºC
-40ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
40
I D - Amperes
TJ = -40ºC
25ºC
125ºC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
10
20
30
40
50
60
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
VS D - Volts
TJ = 125ºC
TJ = 25ºC
Fig. 12. Maxim um Transient Therm al
Resistance
0.01
0.10
1.00
1
10
100
1000
Pulse Width - milliseconds


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