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IXBD4410PI Datasheet(PDF) 5 Page - IXYS Corporation |
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IXBD4410PI Datasheet(HTML) 5 Page - IXYS Corporation |
5 / 11 page 5 © 2004 IXYS All rights reserved IXBD4410 IXBD4411 the IXBD4411 is strictly for status only. Any gate-drive shutdown because of a high-side fault is done locally within the high-side IXBD4411. The IXBD4411 gate-drive will turn-off the power device whenever an overcurrent or under voltage condition arises. The overcurrent sensing is active only while the gate driver output is "high" (on). The overcurrent fault condition is latched and is reset on the next INH gate input positive transition. The FLT (pin 8) of the IXBD4411 is not used and should be grounded. The low-side IXBD4410 driver provides an output pin 8 (FLT) to indicate a high- side (IXBD4411) or a low-side (IXBD4410) fault. This output pin is an "open-drain" output. The IXBD4410 low- side driver fault indications are similar to the IXBD4411 high-side driver indications as outlined above. A "graphic" logic diagram of the chipset's FLT function is presented in Fig.4. Note that this diagram presents the logic of this function at the "low-side" IXBD4410 driver and is not the actual circuit. It describes the combined logic of the "fault logic" and "hi-side fault sense" blocks in both the IXBD4410 and IXBD4411 as shown in Fig. 2 and 3. The most efficient method of providing power for the high-side driver is by bootstrapping. This method is illustrated in the functional drawing on page 4 and in the application example (Fig. 6 and 9) by diode D1 and capacitor C1. Using this method, the power is drawn through a high-voltage diode onto a reservoir capacitor whenever the floating high-side ground returns to near the real ground of the low-side driver. When the high-side gate is turned on and the floating ground moves towards a higher potential, the bootstrapping diode back-biases, and the high-side driver draws its power solely from the reservoir capacitor. Power may also be provided via any isolated power supply (usually an extra secondary on the system housekeeping supply switching transformer). Both the IXBD4410 and IXBD4411 contain on-board negative charge pumps to provide negative gate drive, which ensures turn-off of the high- or low-side power device in the presence of currents induced by power device Miller capaci- tance or from inductive ground transients. These charge pumps provide -5 V relative to the local driver ground when V DD is at +15 V, and at rated average currents of 25 mA. The charge pump requires two external capacitors, C7 and C11 in Fig. 6. The charge pump frequency is nominally 600 kHz. The charge pump clock is turned off whenever the difference between the V DD and V EE supplies exceed 20 V, to prevent exceeding the breakdown rating of the IC. Both the IXBD4410 and IXBD4411 drivers possess two local grounds each, a common logic ground, and "Kelvin" ground. The Kelvin ground and logic grounds are first connected directly to each other, and then to the Kelvin-source of the power device for accurate over- current measurement in the presence of inductive transients on the power device source terminal. Power MOSFET or IGBT overcurrent sensing utilizes an on-chip comparator with a typical 300 mV threshold. In a typical application, the current mirror pin of the Power MOSFET or IGBT is con- nected to a grounded, low-value resistor, and to the overcurrent comparator input on the high- or low-side driver. The comparator will respond typically within 150 ns to an overcurrent condition to shutdown the driver output. The power switches could be protected also by desa-turation detection (see Fig. 6, 7 and 9). To assure maximum protection for the phase-leg power devices, the chipset incorporates the following Power MOSFET and IGBT protection circuits: Power device overcurrent or desa- turation protection. The IXBD4410/ 4411will turn off the driven device within 150 ns of sensing an output overcurrent or desaturation condition. Gate-drive lockout circuitry to prevent cross conduction (simultaneous conduction of the low- and high-side phase-leg power devices), either under normal operating conditions or when a fault occurs. During power-up, the chipset's gate- drive outputs will be low (off), until the voltage reaches the under-voltage trip point. Under-voltage gate-drive lockout on the low- and/or high- side driver when- ever the respective positive power supply falls below 9.5 V typically. Under-voltage gate-drive lockout on the low- and high- side driver whenever the respective negative power supply rises above -3 V typically. |
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