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IXBD4410P Datasheet(PDF) 1 Page - IXYS Corporation |
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IXBD4410P Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 11 page 1 © 2004 IXYS All rights reserved IXBD4410 IXBD4411 ISOSMARTTM Half Bridge Driver Chipset IXYS reserves the right to change limits, test conditions and dimensions. Type Description Package Temperature Range IXBD4410PI Full-Feature Low-Side Driver 16-Pin P-DIP -40 to +85 °C IXBD4411PI Full-Feature High-Side Driver 16-Pin P-DIP -40 to +85 °C IXBD4410SI Full-Feature Low-Side Driver 16-Pin SO -40 to +85 °C IXBD4411SI Full-Feature High-Side Driver 16-Pin SO -40 to +85 °C The IXBD4410/IXBD4411 ISOSMART chipset is designed to control the gates of two Power MOSFETs or Power IGBTs that are connected in a half- bridge (phase-leg) configuration for driving multiple-phase motors, or used in applications that require half-bridge power circuits. The IXBD4410/ IXBD4411 is a full-feature chipset consisting of two 16-Pin DIP or SO devices interfaced and isolated by two small-signal ferrite pulse transformers. The small-signal transformers provide greater than 1200 V isolation. Even with commutating noise ambients greater than ±50 V/ns and up to 1200 V potentials, this chipset establishes error-free two-way communications between the system ground-reference IXBD4410 and the inverter output- reference IXBD4411. They incorporate undervoltage V DD or VEE lockout and overcurrent or desaturation shutdown to protect the IGBT or Power MOSFET devices from damage. The chipset provides the necessary gate drive signals to fully control the grounded-source low-side power device as well as the floating-source high-side power device. Additionally, the IXBD4410/4411 chipset provides a negative-going, off-state gate drive signal for improved turn-off of IGBTs or Power MOSFETs and a system logic- compatible status fault output FLT to indicate overcurrent or desaturation, and undervoltage V DD or VEE. During a status fault, both chipset keep their respective gate drive outputs off; at V EE. 540 V- Features 1200 V or greater low-to-high side isolation. Drives Power Systems Operating on up to 575 V AC mains dv/dt immunity of greater than ±50V/ns Proprietary low-to-high side level translation and communication On-chip negative gate-drive supply to ensure Power MOSFET or IGBT turn-off and to prevent gate noise interference 5 V logic compatible HCMOS inputs with hysteresis Available in either the 16-Pin DIP or the 16-Pin wide-body, small-outline plastic package 20 ns switching time with 1000 pF load; 100 ns switching time with 10,000 pF load 100 ns propagation delay time 2 A peak output drive capability Self shut-down of output in response to over-current or short-circuit Under-voltage and over-voltage V DD lockout protection Protection from cross conduction of the half bridge Logic compatible fault indication from both low and high-side driver Applications 1- or 3-Phase Motor Controls Switch Mode Power Supplies (SMPS) Uninterruptible Power Supplies (UPS) Induction Heating and Welding Systems Switching Amplifiers General Power Conversion Circuits |
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