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NTE2343 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE2343
Description  Silicon Complementary Transistors Darlington Power Amp, Switch
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Manufacturer  NTE [NTE Electronics]
Direct Link  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE2343 Datasheet(HTML) 1 Page - NTE Electronics

  NTE2343 Datasheet HTML 1Page - NTE Electronics NTE2343 Datasheet HTML 2Page - NTE Electronics  
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NTE2343 (NPN) & NTE2344 (PNP)
Silicon Complementary Transistors
Darlington Power Amp, Switch
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO
120V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO
120V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
DC
12A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB
200mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (TC = +25°C), PC
80W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–65
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC
1.56
°C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Emitter Sustaining Voltage
VCEO(sus) IC = 100mA, IB = 0, Note 1
100
V
Collector Cutoff Current
ICBO
VCB = 100V, IE = 0
100
µA
ICEO
VCE = 100V, IB = 0
1
mA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
2
mA
DC Current Gain
hFE
VCE = 3V, IC = 3A
1000
VCE = 3V, IC = 5A
750
1000
VCE = 3V, IC = 10A
100
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 5A, IB = 20mA, Note 1
2.0
V
IC = 10A, IB = 100mA, Note 1
3.0
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 5A, IB = 20mA, Note 1
2.5
V
IC = 10A, IB = 100mA, Note 1
4.0
V
Parallel Diode Forward Voltage
Vf
If = 5A, Note 1
1.3
2.0
V
If = 10A, Note 1
1.8
4.0
V
Small–Signal Current Gain
hfe
IC = 1A, VCE = 10V, f = 1MHz
20
Note 1. Pulse Test: Pulse Width = 300
µs, Duty Cycle = 1.5%.


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