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NTE2340 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE2340
Description  Silicon NPN Transistor Darlington Power Amp, Switch
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE2340 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE2340
Silicon NPN Transistor
Darlington Power Amp, Switch
Features:
D 60V Zener Diode Built–In Between Collector and Base
D Very Small Fluctuation in Breakdown Voltages
D Large Energy Handling Capability
D High Speed Switching
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO
60
±10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO
60
±10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
12A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, PC
TA = +25°C
1.3W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +25°C
45W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cut–Off Current
ICBO
VCB = 50V, IE = 0
100
µA
Emitter Cut–Off Current
IEBO
VEB = 7V, IC = 0
2
mA
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 5mA, IB = 0
50
70
V
DC Current Gain
hFE (1)
VCE = 3V, IC = 4A
2000
5000
hFE (2)
VCE = 3V, IC = 8A
500
Collector–Emitter Saturation Voltage
VCE(sat) IC = 4A, IB = 8mA
1.5
V
Base–Emitter Saturation Voltage
VBE(sat) IC = 4A, IB = 8mA
2.0
V
Transition Frequency
fT
VCE = 10V, IC = 0.5A, f = 1MHz
20
MHz
Turn–On Time
ton
VCC = 50V, IB1 = –IB2 = 8mA,
0.5
µs
Storage Time
tstg
IC = 4A
4.0
µs
Fall Time
tf
1.0
µs
Energy Handling Capability
Es/b
IC = 1A, L = 100mH,
RBE = 100Ω
50
mJ


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