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IL2 Datasheet(PDF) 2 Page - Vishay Siliconix |
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IL2 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number 83612 Rev. 1.5, 26-Oct-04 IL1/ IL2/ IL5 Vishay Semiconductors Output Coupler Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Part Symbol Value Unit Collector-emitter breakdown voltage IL1 BVCEO 50 V IL2 BVCEO 70 V IL5 BVCEO 70 V Emitter-base breakdown voltage BVEBO 7.0 V Collector-base breakdown voltage BVCBO 70 V Collector current IC 50 mA t < 1.0 ms IC 400 mA Power dissipation Pdiss 200 mW Derate linearly from 25 °C 2.6 mW/°C Parameter Test condition Symbol Value Unit Package power dissipation Ptot 250 mW Derate linearly from 25 °C 3.3 mW/°C Isolation test voltage (between emitter and detector referred to standard climate 23 °/50 %RH, DIN 50014) VISO 5300 VRMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature Tstg - 40 to + 150 °C Operating temperature Tamb - 40 to + 100 °C Junction temperature Tj 100 °C Soldering temperature 2.0 mm from case bottom Tsld 260 °C Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 60 mA VF 1.25 1.65 V Breakdown voltage IR = 10 µAVBR 6.0 30 V Reverse current VR = 6.0 V IR 0.01 10 µA Capacitance VR = 0 V, f = 1.0 MHz CO 40 pF Thermal resistance junction to lead Rthjl 750 K/W |
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