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IL2-X009 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. IL2-X009
Description  Optocoupler, Phototransistor Output, With Base Connection
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IL2-X009 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number 83612
Rev. 1.5, 26-Oct-04
IL1/ IL2/ IL5
Vishay Semiconductors
Output
Coupler
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Part
Symbol
Value
Unit
Collector-emitter breakdown voltage
IL1
BVCEO
50
V
IL2
BVCEO
70
V
IL5
BVCEO
70
V
Emitter-base breakdown voltage
BVEBO
7.0
V
Collector-base breakdown voltage
BVCBO
70
V
Collector current
IC
50
mA
t < 1.0 ms
IC
400
mA
Power dissipation
Pdiss
200
mW
Derate linearly from 25 °C
2.6
mW/°C
Parameter
Test condition
Symbol
Value
Unit
Package power dissipation
Ptot
250
mW
Derate linearly from 25 °C
3.3
mW/°C
Isolation test voltage (between
emitter and detector referred to
standard climate 23 °/50 %RH,
DIN 50014)
VISO
5300
VRMS
Creepage
≥ 7.0
mm
Clearance
≥ 7.0
mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Storage temperature
Tstg
- 40 to + 150
°C
Operating temperature
Tamb
- 40 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature
2.0 mm from case bottom
Tsld
260
°C
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 60 mA
VF
1.25
1.65
V
Breakdown voltage
IR = 10 µAVBR
6.0
30
V
Reverse current
VR = 6.0 V
IR
0.01
10
µA
Capacitance
VR = 0 V, f = 1.0 MHz
CO
40
pF
Thermal resistance junction to
lead
Rthjl
750
K/W


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