HZS4CLL datasheet(2/5 Pages) RENESAS

Part #	HZS4CLL

Description	Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise

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Manufacturer	RENESAS [Renesas Technology Corp]

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HZS-LL Series

Rev.2.00, Jan.06.2004, page 2 of 4

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Value

Unit

Power dissipation

Pd

250

mW

Junction temperature

Tj

175

°C

Storage temperature

Tstg

–55 to +175

°C

Electrical Characteristics

(Ta = 25°C)

VZ(V) *

1

IR(nA)

ZZT(Ω)

ZZK(kΩ)*

2

∆V

Z1(V) *

3

∆V

Z2(V) *

3

Type

Grade Min

Max IZ(mA) Max

VR(V)

Max

IZT(mA) Typ

IZK(µA) Max

Max

HZS2LL A

1.6

2.0

0.5

100

0.5

350

0.5

(1.2)

50

0.5

0.6

B

1.9

2.3

C

2.2

2.6

HZS3LL A

2.5

2.9

0.5

100

1.0

360

0.5

(1.2)

50

0.5

0.6

B

2.8

3.2

C

3.1

3.5

HZS4LL A

3.4

3.8

0.5

100

2.0

370

0.5

(1.5)

50

0.5

0.6

B

3.7

4.1

C

4.0

4.4

HZS5LL A

4.3

4.7

0.5

100

3.0

380

0.5

(1.5)

50

0.5

0.6

B

4.6

5.0

C

4.9

5.3

Notes: 1. Tested with DC.

2. Reference only.

3.

∆V

Z1 = VZ (IZ = 0.5 mA) – VZ1 (Iz = 0.05 mA)

∆V

Z2 = VZ1 (IZ = 0.05 mA) – VZ2 (Iz = 0.001 mA)

4. Type No. is as follows; HZS2ALL, HZS2BLL, HZS5CLL.

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