UG18xCT, UGF18xCT, UGB18xCT

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Vishay General Semiconductor

Revision: 24-Feb-16

3

Document Number: 88759

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Per Diode

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Fig. 5 - Reverse Switching Characteristics Per Diode

Fig. 6 - Typical Junction Capacitance Per Diode

0

25

50

75

100

125

150

175

0

4

8

12

16

20

24

Case Temperature (°C)

Resistive or Inductive Load

1

10

100

10

100

1000

T

8.3 ms Single Half Sine-Wave

Number of Cycles at 60 Hz

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.01

0.1

1

10

100

Instantaneous Forward Voltage (V)

T

Pulse Width = 300 µs

1 % Duty Cycle

0

20

40

60

80

100

0.01

0.1

1

10

100

1000

Percent of Rated Peak Reverse Voltage (%)

T

T

T

0

25

50

75

100

125

150

175

0

10

20

30

40

50

60

Junction Temperature (°C)

150 A/µs

100 A/µs

20 A/µs

20 A/µs

50 A/µs

100 A/µs

150 A/µs

50 A/µs

t

rr

Q

rr

dI/dt =

I

V

0.1

1

10

100

1

10

100

Reverse Voltage (V)

T

f = 1.0 MHz

V