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NTE2335 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE2335
Description  Silicon NPN Transistor Darlington w/Internal Zener Diode for Line Operated TV
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE2335 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE2335
Silicon NPN Transistor
Darlington w/Internal Zener Diode for Line Operated TV
Features:
D Excellent Wide Safe Operating Area
D Included Avalanche Diode
D High DC Current Gain
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO
60
±15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO
60
±15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, PC
80W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10mA, IE = 0
45
60
75
V
Collector–Emitter Breakdown Voltage
V(BR)CBO IC = 100mA, IB = 0
45
60
75
V
Emitter Cutoff Current
IEBO
VEB = 6V, IC = 0
100
µA
DC Current Gain
hFE
VCE = 5V, IC = 500mA
2000
20000
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 500mA, IB = 1mA
1.5
V
IC = 1A, IB = 1mA
2.5
V
Base–Emitter Voltage
VBE
VCE = 5V, IC = 500mA
1.8
V
Allowable Energy
ET
80
W.sec


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