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H5N3003 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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H5N3003 Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 10 page H5N3003P Rev.2.00, Aug.01.2003, page 2 of 9 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage VDSS 300 V Gate to source voltage VGSS ±30 V Drain current ID 40 A Drain peak current ID (pulse) Note1 160 A Body-drain diode reverse drain current IDR 40 A Body-drain diode reverse drain peak current IDR (pulse) Note1 160 A Avalanche current IAP Note3 30 A Channel dissipation Pch Note2 150 W Channel to case Thermal Impedance θch-c 0.833 °C /W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. Tch ≤ 150°C |
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