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HVR5510U12 Datasheet(PDF) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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HVR5510U12 Datasheet(HTML) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
1 / 2 page HVR5510U12 1.0A 12kV 75nS Ultra Fast Recovery High Voltage Rectifier Subassembly ----------------------------------------------------------------------------------------------------------------------------- ------ GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-10 1 / 2 INTRODUCE: HVGT high voltage silicon rectifier assembly is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. High reliability design. 2. High voltage design. 3. Ultra Fast Recovery. 4. Conform to RoHS and SGS. 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATIONS: 1. High voltage multiplier circuit 2. HV Switching Mode Power Supply . 3. General purpose high voltage rectifier. 4. Other. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 11 grams (approx). SHAPE DISPLAY: SIZE: (Unit:mm) HVGT NAME: HVR-101255H MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C 12 kV Non-Repetitive Peak Renerse Voltage VRSM TA=25°C -- kV Average Forward Current Maximum IFAVM TA=25°C 1.0 A TOIL=55°C -- A Non-Repetitive Forward Surge Current IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS 30 A Junction Temperature TJ 125 °C Allowable Operation Case Temperature Tc -40~+125 °C Storage Temperature TSTG -40~+125 °C ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified) Items Symbols Condition Data value Units Maximum Forward Voltage Drop VFM at 25°C; at IFAVM 16 V Maximum Reverse Current IR1 at 25°C; at VRRM 5.0 uA IR2 at 100°C; at VRRM 50 uA Maximum Reverse Recovery Time TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR 75 nS Junction Capacitance CJ at 25°C; VR=0V; f=1MHz 5.5 pF |
Similar Part No. - HVR5510U12_17 |
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Similar Description - HVR5510U12_17 |
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