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HVG3A300 Datasheet(PDF) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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HVG3A300 Datasheet(HTML) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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1 / 2 page  HVG3A300 3.0A 30kV 80nS Glass passivation Ultra Fast Recovery Rectifier Assembly GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-08 1 / 2 INTRODUCE: HVGT high voltage silicon rectifier assembly is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. High reliability design. 2. High voltage design. 3. Ultra high frequency design. 4. Conform to RoHS and SGS 5. Glass passivation. 6. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATIONS: 1. High frequency switching power supply. 2. Power supply of laser equipment . 3. General purpose high voltage rectifier. 4. High voltage test equipment. 5. Other. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 490 grams (approx). SHAPE DISPLAY: SIZE: (Unit:mm) HVGT NAME: HVC-205825 MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C 30 kV Average Forward Current Maximum IFAVM TA=55°C 3.0 A Suege Current IFSM TA=25°C; Half-Sine Wave; 8.3mS 90 A Junction Temperature TJ 125 °C Allowable Operation Case Temperature Tc -55~+150 °C Storage Temperature TSTG -55~+150 °C ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified) Items Symbols Condition Data value Units Maximum Forward Voltage Drop VF at 25°C; at IF(AV) 36 V Maximum Reverse Current IR1 at 25°C; at VRRM 2.0 uA IR2 at 100°C; at VRRM 50 uA Maximum Reverse Recovery Time TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR 80 nS Junction Capacitance CJ at 25°C; VR=0V; f=1MHz -- pF |
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