CY7C056V
CY7C057V
Document #: 38-06055 Rev. **
Page 5 of 23
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°C to +150°C
Ambient Temperature with
Power Applied.............................................–55
°C to +125°C
Supply Voltage to Ground Potential ............... –0.5V to +4.6V
DC Voltage Applied to
Outputs in High Z State ...........................–0.5V to VDD+0.5V
DC Input Voltage...................................–0.5V to VDD+0.5V
[6]
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
Latch-Up Current .................................................... >200 mA
Shaded areas contain advance information.
Note:
6.
Pulse width < 20 ns.
Selection Guide
CY7C056V
CY7C057V
-12
CY7C056V
CY7C057V
-15
CY7C056V
CY7C057V
-20
Maximum Access Time (ns)
12
15
20
Typical Operating Current (mA)
250
240
230
Typical Standby Current for ISB1 (mA) (Both Ports TTL Level)
55
50
45
Typical Standby Current for ISB3 (µA) (Both Ports CMOS
Level)
10
µA
10
µA
10
µA
Pin Definitions
Left Port
Right Port
Description
A0L–A13/14L
A0R–A13/14R
Address (A0–A13 for 16K; A0–A14 for 32K devices)
SEML
SEMR
Semaphore Enable
CE0L, CE1L
CE0R, CE1R
Chip Enable (CE is LOW when CE0 ≤ VIL and CE1 ≥ VIH)
INTL
INTR
Interrupt Flag
BUSYL
BUSYR
Busy Flag
I/O0L–I/O35L
I/O0R–I/O35R
Data Bus Input/Output
OEL
OER
Output Enable
R/WL
R/WR
Read/Write Enable
B0–B3
Byte Select Inputs. Asserting these signals enables read and write oper-
ations to the corresponding bytes of the memory array.
BM, SIZE
See Bus Matching for details.
WA, BA
See Bus Matching for details.
M/S
Master or Slave Select
VSS
Ground
VDD
Power
Operating Range
Range
Ambient
Temperature
VDD
Commercial
0
°C to +70°C
3.3V
± 165 mV
Industrial
–40
°C to +85°C
3.3V
± 165 mV