SC8270S datasheet(2/8 Pages) SAMHOP

Part #	SC8270S

Description	Dual N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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m ohm

10.2

Symbol

Min

Typ

Max

Units

BVSSS

24

V

1

IGSS

±1

uA

VGS(th)

0.5

V

VGS=4.5V , IS=2A

RSS(ON)

Source-Source On-State Resistance

ISSS

uA

Gate Threshold Voltage

VSS=VGS , IS=1mA

VSS=24V , VGS=0V

VGS= ±8V , VSS=0V

Zero Gate Voltage Source Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Source-Source Breakdown Voltage

VGS=0V , IS=250uA

ON CHARACTERISTICS

SC8270S

0.8

1.5

gFS

14

S

Qg

430

nC

1700

5390

3970

tD(ON)

23

ns

tr

ns

tD(OFF)

ns

tf

ns

SWITCHING CHARACTERISTICS

VDD=24V

IS=2A

VGS=4.0V

RGEN=6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

VSS=5V , IS=2A

Forward Transconductance

c

VDD=24V,IS=4A,

VG1S1=4.0V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VFSS

Diode Forward Voltage

VGS=0V,IS=2A

0.77

1.2

V

Note

a.Mounted on FR4 board of 25.4mm x 25.4mm x 1.6mm.

b.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.

c.Guaranteed by design, not subject to production testing.

www.samhop.com.tw

Oct,07,2016

2

m ohm

VGS=4.0V , IS=2A

10.5

m ohm

VGS=3.8V , IS=2A

11.5

m ohm

VGS=3.1V , IS=2A

12.0

6.0

6.2

6.6

7.0

8.2

8.5

9.0

9.5

__

VGS=2.5V , IS=2A

14.0

8.0

11.0

m ohm

Preliminary

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SC8270S Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

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