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SI4558DY Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI4558DY
Description  N- and P-Channel 30-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI4558DY Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Si4558DY
Vishay Siliconix
www.vishay.com
S FaxBack 408-970-5600
2-2
Document Number: 70633
S-56944—Rev. E, 23-Nov-98
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
N-Ch
1.0
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
P-Ch
–1.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
ZG
V l
D i C
I
VDS = 30 V, VGS = 0 V
N-Ch
1
A
Zero Gate Voltage Drain Current
IDSS
VDS = –30 V, VGS = 0 V
P-Ch
–1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V, TJ = 70_C
N-Ch
5
mA
VDS = –24 V, VGS = 0 V, TJ = 70_C
P-Ch
–5
OS
Di C
b
I
VDS = 5 V, VGS = 10 V
N-Ch
30
A
On-State Drain Currentb
ID(on)
VDS = –5 V, VGS = –10 V
P-Ch
–30
A
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 4.5 V
N-Ch
8.0
A
VDS = –5 V, VGS = –4.5 V
P-Ch
–8.0
DiS
OS
R
i
b
VGS = 10 V, ID = 6 A
N-Ch
0.032
0.040
W
Drain-Source On-State Resistanceb
rDS(on)
VGS = –10 V, ID = –6 A
P-Ch
0.032
0.040
W
Drain-Source On-State Resistanceb
rDS(on)
VGS = 4.5 V, ID = 4.8 A
N-Ch
0.045
0.060
W
VGS = –4.5 V, ID = –4.4 A
P-Ch
0.056
0.070
Forward Transconductanceb
gfs
VDS = 15 V, ID = 6 A
N-Ch
13
S
Forward Transconductanceb
gfs
VDS = –15 V, ID = –6 A
P-Ch
10.6
S
Diode Forward Voltageb
VSD
IS = 2 A, VGS = 0 V
N-Ch
0.77
1.2
V
Diode Forward Voltageb
VSD
IS = –2 A, VGS = 0 V
P-Ch
0.77
–1.2
V
Dynamica
Total Gate Charge
Qg
NCh
l
N-Ch
16
30
C
Total Gate Charge
Qg
N-Channel
VDS =15 V VGS =10V ID =6 A
P-Ch
22
35
C
Gate-Source Charge
Qgs
VDS = 15 V, VGS = 10 V, ID = 6 A
PCh
l
N-Ch
3.4
nC
Gate-Source Charge
Qgs
P-Channel
VDS = –15 V, VGS = –10 V
P-Ch
5.4
nC
Gate-Drain Charge
Qgd
VDS = –15 V, VGS = –10 V
ID = –6 A
N-Ch
2.3
Gate-Drain Charge
Qgd
P-Ch
3.6
Turn-On Delay Time
td(on)
NCh
l
N-Ch
12
25
Turn-On Delay Time
td(on)
NCh
l
P-Ch
12
25
Rise Time
tr
N-Channel
VDD = 15 V, RL = 15 W
N-Ch
12
25
Rise Time
tr
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Ch
12
25
Turn-Off Delay Time
td(off)
P-Channel
V15 V R
15
W
N-Ch
27
55
ns
Turn-Off Delay Time
td(off)
VDD = –15 V, RL = 15 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
P-Ch
38
55
ns
Fall Time
tf
ID
1 A, VGEN
10 V, RG
6
W
N-Ch
24
50
Fall Time
tf
P-Ch
25
50
Source-Drain Reverse Recovery Time
trr
IF = 2 A, di/dt = 100 A/ms
N-Ch
45
80
Source-Drain Reverse Recovery Time
trr
IF = –2 A, di/dt = 100 A/ms
P-Ch
50
80
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.


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