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NTE2321 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE2321
Description  Silicon NPN Transistor Quad, General Purpose
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE2321 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE2321
Silicon NPN Transistor
Quad, General Purpose
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCBO
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, IC
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TA = +25°C, Each Transistor), PD
0.65W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
5.2mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TA = +25°C, Total Device), PD
1.9W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
15.2mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ
–65
° to +200°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–65
° to +200°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO
IC = 10mA, IB = 0, Note 1
40
V
Collector–Base Breakdown Voltage
V(BR)CBO
IC = 10µA, IE = 0
60
V
Emitter–Base Breakdown Voltage
V(BR)EBO
IE = 10µA, IC = 0
5
V
Collector Cutoff Current
ICBO
VCB = 50V, IE = 0
50
nA
Emitter Cutoff Current
IEBO
VEB = 3V, IE = 0
50
nA
ON Characteristics
DC Current Gain
hFE
VCE = 10V, IC = 10mA
75
VCE = 10V, IC = 150mA
100
VCE = 10V, IC = 300mA
30
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 150mA, IB = 15mA
0.4
V
IC = 300mA, IB = 30mA
1.6
V
Small–Signal Characteristics
Current Gain–Bandwidth Product
fT
VCE = 20V, IC = 20mA, f = 100MHz,
Note 1
200
350
MHz
Output Capacitance
Cobo
VBE = 19V, IE = 0, f = 1MHz
4.5
8.0
pF
Input Capacitance
Cibo
VBE = 0.5V, IC = 0, f = 1MHz
17
30
pF
Note 1. Pulse test: Pulse Width
≤ 300µs, Duty Cycle ≤ 2%.


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