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M54522P Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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M54522P Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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Aug. 1999 TIMING DIAGRAM NOTE 1 TEST CIRCUIT MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54522P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE PG 50 Ω CL Measured device OPEN VO RL INPUT OUTPUT (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10 µs, tr = 6ns, tf = 6ns, ZO = 50Ω VIN = 0 to 8V (2) Input-output conditions : RL = 25 Ω, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes ton 50% 50% 50% 50% toff INPUT OUTPUT Thermal Derating Factor Characteristics Ambient temperature Ta ( °C) M54522FP M54522P 0 0 0.5 1.0 1.5 2.0 25 50 75 100 Output Saturation Voltage Collector Current Characteristics Output saturation voltage VCE (sat) (V) 0 0 200 100 300 VI = 4V Ta = –20 °C Ta = 25 °C Ta = 75 °C 400 500 0.5 1.0 1.5 2.0 Duty-Cycle-Collector Characteristics (M54522P) Duty cycle (%) •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25 °C •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75 °C 0 0 100 200 300 400 500 20 40 60 80 100 Duty-Cycle-Collector Characteristics (M54522P) Duty cycle (%) 0 0 100 200 300 400 500 20 40 60 80 100 TYPICAL CHARACTERISTICS |
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