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M54519P Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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M54519P Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 4 page 
Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75 °C) V (BR) CEO II hFE V V Parameter — — — — 0 8 5 0 40 0.5 Limits min typ max Symbol Unit 0 0 — — 400 200 30 mA V V mA — 40 — — 0.3 1000 — 1.3 1.0 0.8 6000 — 2.4 1.6 1.8 — Symbol Unit Parameter Test conditions Limits min typ+ max V + : The typical values are those measured under ambient temperature (Ta) of 25 °C. There is no guarantee that these values are obtained under any conditions. ns ns — — 40 400 — — Symbol Unit Parameter Test conditions Limits min typ max TIMING DIAGRAM NOTE 1 TEST CIRCUIT PG 50 Ω CL RL Measured device VO INPUT OUTPUT (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10 µs, tr = 6ns, tf = 6ns, ZO = 50Ω VP = 8VP-P (2) Input-output conditions : RL = 25 Ω, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes VO VIL Output voltage “H” input voltage “L” input voltage IC VIH Duty Cycle P : no more than 8% FP : no more than 6% IC ≤ 400mA IC ≤ 200mA Duty Cycle P : no more than 30% FP : no more than 25% Collector current (Current per 1 cir- cuit when 7 circuits are coming on si- multaneously) Collector-emitter breakdown voltage Input current DC amplification factor ICEO = 100 µA VI = 8V, IC = 400mA VI = 5V, IC = 200mA VI = 17V VCE = 4V, IC = 400mA, Ta = 25 °C VCE (sat) Collector-emitter saturation voltage Turn-on time Turn-off time ton toff CL = 15pF (note 1) ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75 °C) SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C) ton 50% 50% 50% 50% toff INPUT OUTPUT |
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