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2SK3274L Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SK3274L Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 9 page 2SK3274 (L), 2SK3274 (S) Rev.3.00 May 15, 2006 page 4 of 8 0.10 0.02 0.04 0.06 0.08 –40 0 40 80 120 160 0 0.1 0.3 3 10 30 100 50 20 10 2 1 5 0.5 1 25°C Tc = –25°C 75°C 5 A, 10 A, 20 A ID = 5 A, 10 A, 20 A Drain Current ID (A) Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Pulse Test 0.1 0.3 1 3 10 30 100 1000 200 500 100 20 50 10 0 10203040 50 5000 2000 100 200 500 1000 50 40 30 20 10 0 0 20 816 24 32 40 0 4 8 16 12 1000 100 300 1 3 10 30 0.1 0.3 1 3 10 30 100 20 50 10 VGS = 0 f = 1 MHz Ciss Coss Crss ID = 30 A VDS VGS VDD = 20 V 10 V 5 V di / dt = 50 A / µs VGS = 0, Ta = 25°C tr td(on) td(off) tf Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Drain Current ID (A) Switching Characteristics Gate Charge Qg (nC) Dynamic Input Characteristics VDD = 20 V 10 V 5 V 10 V VGS = 4.5 V VGS = 10 V, VDD = 30 V PW = 5 µs, duty ≤ 1 % |
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