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TPC8204 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. TPC8204
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TPC8204 Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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TPC8204
2003-02-18
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
TPC8204
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
l Small footprint due to small and thin package
l Low drain−source ON resistance
: RDS (ON) = 16 mΩ (typ.)
l High forward transfer admittance : |Yfs| = 18 S (typ.)
l Low leakage current
: IDSS = 10 µA (max) (VDS = 20 V)
l Enhancement−mode
: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
20
V
Drain-gate voltage (RGS = 20kΩ)
VDGR
20
V
Gate-source voltage
VGSS
±12
V
D C
(Note 1)
ID
6
Drain curren
Pulse
IDP
24
A
Single-device
operation
(Note 3a)
PD (1)
1.5
Drain power
dissipation
(t = 10s)
(Note 2a)
Single-device value
at dual operation
(Note 3b)
PD(2)
1.1
W
Single-device
operation
(Note 3a)
PD (1)
0.75
Drain power
dissipation
(t = 10s)
(Note 2b)
Single-device value
at dual operation
(Note 3b)
PD (2)
0.45
W
Single pulse avalanche energy
(Note 4)
EAS
46.8
mJ
Avalanche current
(Note 1)
IAR
6
A
Repetitive avalanche energy
Single-device value at operation
(Note 2a, Note 3b, Note 5)
EAR
0.1
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration


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