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NTE2300 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE2300
Description  Silicon NPN Transistor High Voltage, Horizontal Output
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE2300 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE2300
Silicon NPN Transistor
High Voltage, Horizontal Output
Description:
The NTE2300 is a silicon NPN transistor in a TO3P type package designed for use in large screen
color TV deflection circuits.
Features:
D High Breakdown Voltage and High Reliability
D High Switching Speed
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO
1500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
16A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (TC = +25°C), PD
120W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Charactertistics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 800V, IE = 0
10
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
1
mA
DC Current Gain
hFE
VCE = 5V, IC = 1A
8
Current–Gain Bandwidth Product
fT
VCE = 10V, IC = 1A
3
MHz
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 4A, IB = 0.8A
5.0
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 4A, IB = 0.8A
1.5
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 5mA, IE = 0
1500
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 100mA, RBE = ∞
800
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 200mA, IC = 0
7
V
Fall Time
tf
IC = 4A, IB1 = 0.8A, IB2 = –1.6A
0.4
µs


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