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SPW24N60C3 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPW24N60C3 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page SPW24N60C3 CoolMOS TM Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances • Improved transconductance Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current 1) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=12.1 A, V DD=50 V 780 mJ Avalanche energy, repetitive t AR 1),2) E AR I D=24.3 A, V DD=50 V Avalanche current, repetitive t AR 1) I AR A Drain source voltage slope dv /dt I D=24.3 A, V DS=480 V, T j=125 °C V/ns Gate source voltage V GS static V V GS AC (f >1 Hz) Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C 1.5 24.3 50 Value 24.3 15.4 72.9 ±20 ±30 240 -55 ... 150 V DS @ T j,max 650 V R DS(on),max 0.16 Ω I D 24.3 A Product Summary Type Package Ordering Code Marking SPW24N60C3 P-TO247 Q67040-S4640 24N60C3 P-TO247 Rev. 1.0 page 1 2004-04-27 |
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