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NTE229 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE229
Description  Silicon NPN Transistor VHF Oscillator, Mixer, IF Amp
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE229 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE229
Silicon NPN Transistor
VHF Oscillator, Mixer, IF Amp
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCBO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TA = +25°C), PT
425mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above +25
°C
5mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16”
±1/32” from case, 10sec), TL
+230
°C
. . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Breakdown Voltage
V(BR)CBO IC = 100µA, IE = 0
30
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 100µA, IC = 0
3
V
Collector Cutoff Current
ICBO
VCB = 30V, IE = 0
200
nA
DC Current Gain
hFE
IC = 5mA, VCE = 10V
30
225
Collector–Emitter Sustaining Voltage
VCEO(sus) IC = 1mA, IB = 0
30
V
Base–Emitter ON Voltage
VBE(on)
IC = 5mA, VCE = 10V
0.85
V
Current Gain–Bandwidth Product
fT
IC = 5mA, VCE = 10V,
f = 100MHz
500
MHz
Power Gain
Gpe
VCC = 12V, VBB = 2.5V,
f = 45MHz
28
dB
Collector–Base Capacitance
Ccb
IE = 0, VCB = 15V, f = 1MHz
0.4
pF
Noise Figure
NF
VCC = 12V, f = 45MHz
6
dB


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