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NTE228A Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE228A
Description  Silicon NPN Transistor High Voltage Amp, Video Output
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE228A Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE228A
Silicon NPN Transistor
High Voltage Amp, Video Output
Description:
The NTE228A is a silicon NPN transistor in a TO202M type package designed for high–voltage TV video
and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators.
Features:
D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 350V (Min) @ IC = 1mA
D Low Collector–Emitter Saturation Voltage: VCE(sat) = 600mV (Max) @ IC = 20mA
D Low Collector–Emitter Capacitance: Ccb = 3pF (Max) @ VCB = 30V
D 2 Watts Free Air Dissipation @ TA = +25°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO
350V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCBO
450V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
700mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB
250mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TA = +25°C), PD
2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
16mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
80mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, RthJA
62.5
°C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC
12.5
°C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16” from case, 10sec), TL
+250
°C
. . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0
350
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 100µA, IE = 0
450
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 100µA, IC = 0
6
V
Collector Cutoff Current
ICBO
VCB = 250V, IE = 0
0.2
µA
Emitter Cutoff Current
IEBO
VBE = 5V, IC = 0
0.1
µA


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