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NTE227 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE227
Description  Silicon NPN Transistor High Voltage Amp, Video Output
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE227 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE227
Silicon NPN Transistor
High Voltage Amp, Video Output
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (TA = +25°C), PDmax
850mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (TCOLLECTOR LEAD = +25°C), PDmax
2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Operating Junction Temperature, TJmax
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case (TCOLLECTOR LEAD = +25°C), RthJC
62.5
°C/W
. . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient (TA = +25°C), RthJA
147
°C/W
. . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 260V
100
nA
Emitter Cutoff Current
IEBO
VEB = 6V
100
nA
DC Current Gain
hFE
IC = 1mA, VCE = 10V
25
IC = 10mA, VCE = 10V
40
90
200
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA
300
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 100µA
300
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA
6
V
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 20mA, IB = 2mA
0.25
1.0
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 20mA, IB = 2mA
0.74
1.0
V
Transition Frequency
fT
IC = 10mA
50
200
MHz
Base–Emitter Saturation Voltage
VBE(sat)
IC = 10mA
0.76
V
Capacitance
Cib
70
pF


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