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K6F8016R6B Datasheet(PDF) 5 Page - Samsung semiconductor |
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K6F8016R6B Datasheet(HTML) 5 Page - Samsung semiconductor |
5 / 9 page K6F8016R6B Family Revision 1.0 October 2001 5 CMOS SRAM AC OPERATING CONDITIONS TEST CONDITIONS(Test Load and Input/Output Reference) Input pulse level: 0.2 to Vcc-0.2V Input rising and falling time: 5ns Input and output reference voltage: 0.9V Output load(see right): CL=100pF+1TTL CL=30pF+1TTL DATA RETENTION CHARACTERISTICS 1. 1) CS1 ≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or 2) 0 ≤CS2≤0.2V(CS2 controlled) 2. Typical value are measured at TA=25 °C and not 100% tested. Item Symbol Test Condition Min Typ2) Max Unit Vcc for data retention VDR CS1 ≥Vcc-0.2V1) 1.0 - 2.2 V Data retention current IDR Vcc=1.2V, CS1 ≥Vcc-0.2V1) - 0.5 6 µA Data retention set-up time tSDR See data retention waveform 0 - - ns Recovery time tRDR tRC - - CL1) 1. Including scope and jig capacitance R22) R12) VTM3) 2. R1=3070 Ω, R2=3150Ω 3. VTM =1.8V AC CHARACTERISTICS(Vcc=1.65~2.2V, Industrial product: TA=-40 to 85 °C) Parameter List Symbol Speed Bins Units 70ns 85ns Min Max Min Max Read Read Cycle Time tRC 70 - 85 - ns Address Access Time tAA - 70 - 85 ns Chip Select to Output tCO - 70 - 85 ns Output Enable to Valid Output tOE - 35 - 40 ns UB, LB Access Time tBA - 70 - 85 ns Chip Select to Low-Z Output tLZ 10 - 10 - ns UB, LB Enable to Low-Z Output tBLZ 10 - 10 - ns Output Enable to Low-Z Output tOLZ 5 - 5 - ns Chip Disable to High-Z Output tHZ 0 25 0 25 ns UB, LB Disable to High-Z Output tBHZ 0 25 0 25 ns Output Disable to High-Z Output tOHZ 0 25 0 25 ns Output Hold from Address Change tOH 10 - 10 - ns Write Write Cycle Time tWC 70 - 85 - ns Chip Select to End of Write tCW 60 - 70 - ns Address Set-up Time tAS 0 - 0 - ns Address Valid to End of Write tAW 60 - 70 - ns UB, LB Valid to End of Write tBW 60 - 70 - ns Write Pulse Width tWP 50 - 60 - ns Write Recovery Time tWR 0 - 0 - ns Write to Output High-Z tWHZ 0 20 0 25 ns Data to Write Time Overlap tDW 30 - 35 - ns Data Hold from Write Time tDH 0 - 0 - ns End Write to Output Low-Z tOW 5 - 5 - ns |
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